advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v low gate charge r ds(on) 9m fast switching i d 60a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =100 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-c thermal resistance junction-case max. 2.8 /w rthj-a thermal resistance junction-ambient max. 110 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 53 -55 to 175 operating junction temperature range -55 to 175 linear derating factor 0.36 continuous drain current, v gs @ 10v 43 pulsed drain current 1 195 gate-source voltage 20 continuous drain current, v gs @ 10v 60 parameter rating drain-source voltage 30 200909032 ap70t03ah/j g d s the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (AP70T03AJ) are available for low-profile applications. g d s to-252(h) g d s to-251(j)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.032 -v/ r ds(on) static drain-source on-resistance v gs =10v, i d =33a - - 9 m v gs =4.5v, i d =20a - - 18 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs v ds =10v, i d =33a - 35 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =175 o c) v ds =24v ,v gs =0v - - 250 ua i gss gate-source leakage v gs = 20v - - 100 na q g total gate charge 2 i d =33a - 16.5 - nc q gs gate-source charge v ds =20v - 5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 10.3 - nc t d(on) turn-on delay time 2 v ds =15v - 8.2 - ns t r rise time i d =33a - 105 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 21.4 - ns t f fall time r d =0.45 - 8.5 - ns c iss input capacitance v gs =0v - 1485 - pf c oss output capacitance v ds =25v - 245 - pf c rss reverse transfer capacitance f=1.0mhz - 170 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.3v - - 60 a i sm pulsed source current ( body diode ) 1 - - 195 a v sd forward on voltage 2 t j =25 , i s =60a, v gs =0v - - 1.3 v notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. ap70t03ah/j
ap70t03ah/ j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 0 30 60 90 120 0.0 1.5 3.0 4.5 v ds , drain-to-source voltage (v) i d , drain current (a) t c =175 o c 10v 8.0v 6.0v v gs =4.0v 0 50 100 150 200 0.0 1.5 3.0 4.5 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 6.0v v gs =4.0v 0.4 0.8 1.2 1.6 2 -50 25 100 175 t j , junction temperature ( o c) normalized r ds(on) i d =33a v gs =10v 0 20 40 60 0 4 8 12 16 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =33a t c =25 0.1 1 10 100 1000 0 0.5 1 1.5 v sd , source-to-drain voltage (v) i s (a) tj=25 o c tj=175 o c 0.5 1 1.5 2 2.5 -50 25 100 175 t j , junction temperature ( o c ) v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig10. effective transient thermal impedanc e fig 11. switching time waveform fig 12. gate charge waveform ap70t03ah/j 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 10us 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 3 6 9 12 0102030 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =33a v ds =16v v ds =20v v ds =24v 10 100 1000 10000 1 8 15 22 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge
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